Silicon Carbide (SiC) has emerged as a promising semiconductor material for electronic devices due to its exceptional material properties, including high thermal conductivity, wide bandgap, and excellent chemical and mechanical stability. As SiC-based devices become increasingly integral to various applications, understanding and optimizing dopant characteristics is crucial for advancing their performance and reliability. This thesis focuses on the comprehensive characterization of dopants in SiC semiconductors, aiming to bridge the gap between material science and device engineering. The research involves the exploration of various dopant types, concentrations, and their impact on the electrical, structural, and thermal properties of SiC. Both traditional and novel doping techniques are investigated, with an emphasis on their effects on carrier mobility, doping efficiency, and device functionality. The experimental methodology encompasses advanced analytical techniques such as Secondary Ion Mass Spectrometry (SIMS), X-ray Photoelectron Spectroscopy (XPS), and Hall effect measurements to precisely quantify and analyze dopant profiles, dopant activation levels, and their distribution within the SiC lattice. Additionally, the impact of dopants on defect formation and migration in SiC will be investigated to gain insights into the material’s long-term stability and reliability. The research also explores the practical implications of dopant characterization on SiC device performance. Through the integration of the acquired knowledge, this study aims to propose optimized doping strategies for enhancing the efficiency and reliability of SiC-based electronic devices. The findings of this research hold significant potential for advancing the field of SiC semiconductors, enabling the development of next-generation electronic components with improved performance, efficiency, and longevity.