Silicon-based radiation detection systems, composed of both detectors and associated electronics, are widely used across various sectors, including consumer electronics, automotive, industrial processes, medical imaging, and space exploration. However, their performance in high-radiation and high-temperature environments, particularly in medical and space applications, is significantly limited by radiation damage and thermal instability.

Silicon Carbide (SiC), already widely used in power electronics and automotive applications, is now emerging as a highly attractive material for harsh environments due to its exceptional radiation hardness and high-temperature tolerance. While SiC technology holds substantial potential to overcome the limitations of conventional silicon-based systems, further research is essential to optimize material quality, refine fabrication techniques, and establish robust manufacturing infrastructures. This research must also include thorough characterization of both detectors and electronic components, as well as the design of fundamental circuits such as amplifiers, comparators, and digital cells, to enable the practical implementation of SiC-based detection systems in advanced applications.

The objective of this project is to design and characterize a fully SiC-based CMOS ASIC for radiation applications. The student will work on the characterization of key technological structures, such as transistors and essential analog/mixed-signal circuits, leading to the design of a complete mixed-signal readout chain, while also contributing to the development of a Process Design Kit (PDK).