Point defects in wide band gap semiconductor like diamond and silicon carbide have attracted attention for quantum technology application. The optically active defects, often referred as color centers, are appealing candidates for the solid-state integration of stable single-photon sources for quantum photonics and computing. Furthermore, new sensing opportunities are possible, enabling measurements at the nanoscale, potentially including biological samples, and of weak signals like in advanced magnetometry. The FBK facilities are involved in research projects on diamond and SiC where the deterministic creation of such centers is pursued using state-of-art instrumentation like a multi-species focused ion beam system (FIB) and semiconductor processing techniques, including the nanometric patterning offered by electron beam lithography. The installed FIB allows implantation of Si, Ge and Au at depths well below 50 nm, with lateral resolution of 50-100 nm, and with fluences down to few ions implanted, enabling the deterministic creation and localization of color centers. The proposed research work aims to the creation of color centers in one of these materials, their characterization and their integration in view of advanced quantum sensing applications. The research activity will be integrated in the European projects where our facilities are involved and in collaboration with external partners.